This inventor holds 2 USPTO granted patents. Top assignee: Freescale Semiconductor,inc.. Active years: 2012-2013.
Company Filing History:
Years Active: 2012-2013
Title: Vlad Goldman: Innovator in Power Reduction Technologies
Introduction
Vlad Goldman is a notable inventor based in Kfar Saba, Israel. He has made significant contributions to the field of power reduction technologies, holding a total of 2 patents. His work focuses on innovative methods and devices that enhance power efficiency in electronic systems.
Latest Patents
Goldman's latest patents include a "Method for Power Reduction and a Device Having Power Reduction Capabilities." This invention features a dual edge triggered flip-flop with state retention capabilities. The device incorporates a retention latch and transfer gates that manage power during a power gating period, ensuring efficient energy use. Another significant patent is for an "Integrated Circuit and a Method for Recovering from a Low-Power Period." This system is designed to provide a gated power supply to a power gated circuit, enhancing recovery capabilities after low-power periods.
Career Highlights
Vlad Goldman is currently employed at Freescale Semiconductor, Inc., where he continues to develop innovative technologies. His work has been instrumental in advancing power management solutions in the semiconductor industry.
Collaborations
Goldman has collaborated with notable colleagues such as Sergey Sofer and Noam Sivan, contributing to various projects that focus on enhancing electronic device performance.
Conclusion
Vlad Goldman's contributions to power reduction technologies demonstrate his commitment to innovation in the semiconductor field. His patents reflect a deep understanding of electronic systems and their energy management needs.