Vincenzo Prestileo

Title: Vincenzo Prestileo: Innovator in Integrated-Circuit Technology

Introduction

Vincenzo Prestileo is a notable inventor based in Arese, Italy. He has made significant contributions to the field of integrated-circuit technology. His innovative work has led to the development of a unique patent that enhances the functionality and reliability of electronic components.

Latest Patents

Vincenzo Prestileo holds a patent for an integrated-circuit structure that includes a lateral PNP transistor. This invention features a lateral PNP transistor with concentric p-doped emitter and collector diffusion zones in an n-doped base layer. The base layer is epitaxially grown on a p-type silicon substrate and is covered by a layer of silicon oxide. The design includes emitter and collector electrodes in the form of metallic patches on the oxide layer, which overlie the respective diffusion zones. These patches penetrate the oxide at limited contact areas, ensuring optimal performance. The structure is designed to guard against punch-through upon accidental polarity reversal of the collector/emitter voltage.

Career Highlights

Vincenzo Prestileo is associated with Sgsates Componenti Elettronici S.p.a., where he has contributed to various projects in electronic component design. His work has been instrumental in advancing integrated-circuit technology, making it more efficient and reliable for various applications.

Collaborations

Throughout his career, Vincenzo has collaborated with notable colleagues, including Franco Bertotti and Mario Foroni. These collaborations have fostered innovation and have led to the successful development of advanced electronic components.

Conclusion

Vincenzo Prestileo's contributions to integrated-circuit technology exemplify his dedication to innovation in the field. His patent reflects a significant advancement in electronic design, showcasing his expertise and commitment to enhancing technology.