This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Infineon Technologies North America Corp.. Active years: 2001-2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2001-2003
Title: Vincent Rezard: Innovator in Memory Device Technology
Introduction
Vincent Rezard is a notable inventor based in Nice, France, recognized for his contributions to memory device technology. With a total of two patents to his name, he has made significant strides in the field of integrated memory systems.
Latest Patents
One of Vincent's latest patents is a memory device with support for unaligned access. This innovative integrated memory comprises a plurality of data lines and a plurality of decoders associated with each data line. Each data line can address either a single memory cell or multiple memory cells, functioning as either a word line or a bit line of memory. The decoders generate enable signals upon receiving their associated address signals. Additionally, a plurality of multiplexers, each with two inputs and an output linked to each data line, are provided. The enable signal from each decoder is supplied to the first input of the associated multiplexer and to the second input of the multiplexer linked to the next higher addressed data line, along with a control input for managing the multiplexers.
Career Highlights
Vincent Rezard is currently employed at Infineon Technologies North America Corp., where he continues to develop cutting-edge memory technologies. His work has positioned him as a key player in the advancement of integrated memory systems.
Collaborations
Vincent has collaborated with notable colleagues, including Klaus J. Oberlaender and Sabeen Randhawa, contributing to a dynamic and innovative work environment.
Conclusion
Vincent Rezard's contributions to memory device technology highlight his role as an influential inventor in the field. His innovative patents and collaborative efforts continue to shape the future of integrated memory systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
