Ossining, NY, United States of America

Vincent Derycke


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 75(Granted Patents)


Company Filing History:


Years Active: 2004-2005

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2 patents (USPTO):Explore Patents

Title: Vincent Derycke: Innovator in Nanotechnology

Introduction

Vincent Derycke is a prominent inventor based in Ossining, NY, known for his significant contributions to the field of nanotechnology. With a total of two patents to his name, Derycke has made strides in the development of methods for growing and manipulating carbon nanotubes.

Latest Patents

Derycke's latest patents include a groundbreaking method for the catalyst-free growth of single-wall carbon nanotubes. This innovative approach involves using a silicon carbide semiconductor wafer, which is annealed in a vacuum at high temperatures to induce the formation of single-wall carbon nanotubes. Another notable patent is the methodology for electrically induced selective breakdown of nanotubes. This method outlines a process for forming devices by selectively breaking nanotubes using electrical currents, which allows for precise manipulation of nanotube properties.

Career Highlights

Vincent Derycke is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of nanotechnology research. His work has implications for various applications, including electronics and materials science.

Collaborations

Derycke has collaborated with esteemed colleagues such as Phaedon Avouris and Richard Martel, further enhancing the impact of his research in the field.

Conclusion

Vincent Derycke's innovative work in nanotechnology, particularly in the area of carbon nanotubes, showcases his expertise and commitment to advancing scientific knowledge. His contributions are paving the way for future developments in this exciting field.

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