The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Aug. 23, 2002
Applicants:
Phaedon Avouris, Yorktown Heights, NY (US);
Vincent Derycke, Ossining, NY (US);
Richard Martel, Peekskill, NY (US);
Marko Radosavljevic, Peasantville, NY (US);
Inventors:
Phaedon Avouris, Yorktown Heights, NY (US);
Vincent Derycke, Ossining, NY (US);
Richard Martel, Peekskill, NY (US);
Marko Radosavljevic, Peasantville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2502 ;
U.S. Cl.
CPC ...
Abstract
A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.