Kamakura, Japan

Viktoria Diana Schlykow

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Kioxia Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Viktoria Diana Schlykow. Retrieved from https://idiyas.com/inventor/viktoria-diana-schlykow

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Viktoria Diana Schlykow: Semiconductor Memory Invention

Introduction

Viktoria Diana Schlykow is an inventor associated with Kamakura, Japan, and Kioxia Corporation. Her listed patent concerns nonvolatile semiconductor memory technology.

Latest Patents

Schlykow is credited with 1 patent: “Nonvolatile Semiconductor Memory Device and Method for Controlling Nonvolatile Semiconductor Memory Device.” The invention describes a semiconductor memory device with memory cells, a semiconductor layer, a gate electrode layer, and a control circuit. The circuit tracks how many erase operations have been performed and, after a predetermined count is reached, applies two processing steps to the memory cells. These steps use gate-electrode voltages with opposite polarities, with the first step using a pulse width longer than that of the write operation.

Career Highlights

Schlykow’s listed work is connected to Kioxia Corporation and focuses on nonvolatile memory-device operation and control.

Collaborations

Reika Tanaka is identified as a coworker. The supplied information does not specify her role in the patent or the nature of their collaboration.

Conclusion

Viktoria Diana Schlykow’s listed patent addresses control techniques for nonvolatile semiconductor memory, including processing after repeated erase operations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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