Company Filing History:
Years Active: 1983-1984
Title: Victor K Eu: Innovator in GaAs FET Fabrication and Epitaxial Doping
Introduction:
Victor K Eu is an accomplished inventor and engineer based in Redondo Beach, California. With a focus on GaAs (gallium arsenide) technology, Eu has made significant contributions to the field of microelectronics through his patented innovations. This article will explore Eu's latest patents, highlight his career achievements, and mention his notable collaborations.
Latest Patents:
1. Process for fabricating GaAs FET with ion-implanted channel layer:
Eu's patent describes a unique fabrication process for GaAs FETs (Field-Effect Transistors) utilizing an ion-implanted channel layer. By implementing a capless annealing procedure under an arsine overpressure, along with the removal of a shallow portion of the substrate's outer surface, this technique offers enhanced gate electrode deposition. This innovation contributes to the development of efficient GaAs-based FET devices.
2. Multi-range doping of epitaxial III-V layers from a single source:
Eu's second patent focuses on doping epitaxial GaAs layers using liquid doping solutions. By utilizing AsCl.sub.3:SiCl.sub.4 doping solutions, Eu demonstrates precise control over doping levels in GaAs epitaxial layers. Fine adjustments to doping levels are achievable by manipulating the H.sub.2 flow rate and the temperature of the doping solution. This method proves to be particularly effective for growing GaAs epitaxial layers for FET devices.
Career Highlights:
Victor K Eu's career is marked by his notable contributions to the field of microelectronics and GaAs technology. Having spent a substantial portion of his professional life at Hughes Aircraft Company, Eu has consistently worked towards pushing the boundaries of microelectronic device fabrication and epitaxial layer doping. With three patents to his name, Eu's work exemplifies his expertise and commitment to advancing the field.
Collaborations:
Throughout his career, Victor K Eu has had the opportunity to collaborate with esteemed colleagues. Notably, he has worked alongside Milton Feng and Siang P Kwok, both accomplished researchers in the field of microelectronics. These collaborations have fostered a conducive environment for knowledge exchange, pushing the boundaries of innovation and paving the way for advancements in GaAs technology.
Conclusion:
Victor K Eu's inventive contributions in the realm of GaAs technology have significantly impacted microelectronics. With expertise in GaAs FET fabrication and epitaxial layer doping, his patented processes exemplify his commitment to precision and efficiency. Eu's work serves as a foundation for further developments in microelectronic device fabrication, making him a noteworthy figure in the field.