The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1984
Filed:
Dec. 27, 1982
Applicant:
Inventors:
Milton Feng, Rancho Palos Verdes, CA (US);
Victor K Eu, Redondo Beach, CA (US);
Hilda Kanber, Rolling Hills Estates, CA (US);
Assignee:
Hughes Aircraft Company, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 148-15 ; 148189 ;
Abstract
There is herein described a process for fabricating GaAs FETs with an ion implanted channel layer wherein an ion implanted substrate is capless annealed under an arsine overpressure, and a relatively shallow portion of the outer surface of the substrate in the active layer is removed for the deposition of a gate metallic electrode.
Feng, Milton. (1984). Process for fabricating gaas fet with ion implanted channel layer (U.S. Patent No. 4473939). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4473939
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile