Strasbourg, France

Veronique Hebert

This inventor holds 1 USPTO granted patent. Top assignee: Thomson-Csf. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Veronique Hebert. Retrieved from https://idiyas.com/inventor/veronique-hebert-g6l6caip

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Veronique Hebert: Innovator in Cathode Technology

Introduction

Veronique Hebert is a prominent inventor based in Strasbourg, France. She has made significant contributions to the field of cathode technology, particularly through her innovative methods of fabrication. Her work has implications for various applications in electronics and energy storage.

Latest Patents

Veronique holds a patent for a "Method for the fabrication of an impregnated cathode." This patent describes a unique process where the impregnation is achieved using a sol-gel method. The emissive material used in the cathode only partially fills the pores, which enhances the migration of the material towards the surface. This innovation is crucial as it increases the lifetime of the cathode, making it more efficient for practical applications.

Career Highlights

Veronique is associated with Thomson-Csf, a company known for its advancements in technology and innovation. Her role at the company has allowed her to explore and develop her ideas further, contributing to the advancement of cathode technology.

Collaborations

Throughout her career, Veronique has collaborated with notable professionals in her field, including Bernard Carriere and Arvind Shroff. These collaborations have enriched her work and expanded the impact of her inventions.

Conclusion

Veronique Hebert is a trailblazer in the field of cathode technology, with her innovative methods paving the way for advancements in electronic applications. Her contributions are a testament to the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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