Veeraraghavan S Baskar

Title: Veeraraghavan S Baskar: Innovator in Semiconductor Technology

Introduction

Veeraraghavan S Baskar is a notable inventor based in Schenectady, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of FinFET devices. With a total of 3 patents to his name, Baskar's work has advanced the capabilities of modern electronics.

Latest Patents

Baskar's latest patents focus on controlling the active fin height of FinFET devices. One of his patents describes semiconductor devices and methods that provide uniform fin height profiles for FinFET devices. This is achieved by implementing a gate oxide removal process designed to prevent etching of an isolation layer, such as a shallow trench isolation layer, during the removal of sacrificial gate oxide layers of dummy gate structures in a replacement metal gate process. Another patent addresses controlling the active fin height of FinFET devices using an etch protection layer to prevent the recess of the isolation layer during gate oxide removal. These innovations are crucial for enhancing the performance and reliability of semiconductor devices.

Career Highlights

Baskar is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work at IBM has positioned him as a key player in the development of advanced electronic components.

Collaborations

Throughout his career, Baskar has collaborated with talented individuals such as Yi Song and Jay William Strane. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in the field.

Conclusion

Veeraraghavan S Baskar's contributions to semiconductor technology through his patents and work at IBM highlight his role as an influential inventor. His dedication to innovation continues to shape the future of electronics.