The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Sep. 27, 2019
International Business Machines Corporation, Armonk, NY (US);
Yi Song, Albany, NY (US);
Veeraraghavan S. Baskar, Schenectady, NY (US);
Jay W. Strane, Warwick, NY (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor devices and methods are provided to fabricate fin field-effect transistor (FinFET) devices having uniform fin height profiles. For example, uniformity of fin height profiles for FinFET devices is obtained by implementing a gate oxide removal process which is designed to prevent etching of an isolation layer (e.g., a shallow trench isolation layer) formed of an oxide material during removal of, e.g., sacrificial gate oxide layers of dummy gate structures during a replacement metal gate process.