Palo Alto, CA, United States of America

Vaughn R Deline


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Vaughn R Deline: Innovator in Metal Barrier Technology

Introduction

Vaughn R Deline is a notable inventor based in Palo Alto, California. He has made significant contributions to the field of materials science, particularly in the development of self-forming metal barriers. His innovative techniques have implications for various applications in electronics and semiconductor manufacturing.

Latest Patents

Vaughn R Deline holds a patent for a technique involving self-forming metal barriers. This patent describes a method that includes applying a liquid dielectric composition onto a substrate, which contains metal ions. The process involves partially curing the composition to create a dielectric layer with the metal ions, patterning this layer to form electron-rich regions, and subsequently heating it to drive the metal ions to these regions. This results in the formation of a metal barrier layer on the dielectric surface, followed by the deposition of one or more metal layers onto this barrier.

Career Highlights

Deline is associated with the International Business Machines Corporation (IBM), where he has contributed to various research and development projects. His work has been instrumental in advancing technologies that enhance the performance and reliability of electronic devices.

Collaborations

Some of his notable coworkers include Geraud J Dubois and Willi Volksen, with whom he has collaborated on various projects within IBM.

Conclusion

Vaughn R Deline's innovative work in self-forming metal barriers showcases his expertise and commitment to advancing technology in the electronics field. His contributions continue to influence the development of new materials and processes in semiconductor manufacturing.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…