Wenzenbach, Germany

Vanessa Eichinger


Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Vanessa Eichinger

Introduction

Vanessa Eichinger is a prominent inventor based in Wenzenbach, Germany. She has made significant contributions to the field of optoelectronics, holding a total of 3 patents. Her work focuses on the development of advanced optoelectronic devices that enhance the efficiency and functionality of semiconductor technologies.

Latest Patents

One of her latest patents is titled "Optoelectronic device comprising a current spreading layer." This invention describes an optoelectronic device that includes a semiconductor chip designed to emit electromagnetic radiation. The chip consists of a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and multiple electrical contact elements. The first current spreading layer is positioned on the side of the second semiconductor layer that faces away from the first semiconductor layer. The electrical contact elements connect the first semiconductor layer to the first current spreading layer, while the second current spreading layer is electrically linked to the second semiconductor layer. This layer is strategically placed between the first current spreading layer and the second semiconductor layer, with an insulating layer ensuring that the first and second electrical contact elements are insulated from the second current spreading layer.

Another notable patent is for an "optoelectronic semiconductor chip." This invention includes a semiconductor body, first and second contact elements, a chip carrier, an electrically conductive contact layer, and an electrically conductive supply layer. An insulating layer separates the contact layer from the supply layer, and at least one electrically conductive feed-through element is embedded within the insulating layer. These feed-through elements serve to electrically connect the supply layer to the contact layer, with their quantity and size varying across different sides of the semiconductor body.

Career Highlights

Vanessa Eichinger is currently employed at Osram OLED GmbH, where she continues to push the boundaries of optoelectronic technology. Her innovative work has positioned her as a key figure in the development of next-generation optoelectronic devices.

Collaborations

Throughout her career, Vanessa has collaborated with notable colleagues, including Lorenzo Zini and Roland Heinrich Enzmann. These partnerships have fostered a collaborative environment that enhances the innovation process.

Conclusion

Vanessa Eichinger's contributions to the field of optoelectronics are noteworthy, as evidenced by her patents and ongoing work at Osram OLED GmbH. Her innovative spirit and collaborative efforts

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