The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

May. 08, 2019
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Roland Heinrich Enzmann, Penang, MY;

Christian Mueller, Deuerling, DE;

Stefan Barthel, Regensburg, DE;

Vanessa Eichinger, Wenzenbach, DE;

Marc Christian Nenstiel, Regensburg, DE;

Lorenzo Zini, Regensburg, DE;

Assignee:

Osram OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 25/167 (2013.01); H01L 33/005 (2013.01); H01L 33/382 (2013.01); H01L 33/62 (2013.01); H01L 33/642 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.


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