Antibes, France

Valerio Lanieri

This inventor holds 2 USPTO granted patents. Top assignee: Arm Limited. Active years: 2026.


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Valerio Lanieri: Innovator in Memory Architecture

Introduction

Valerio Lanieri is a prominent inventor based in Antibes, France. He has made significant contributions to the field of memory architecture, holding 2 patents that showcase his innovative approach to technology. His work focuses on enhancing the efficiency and functionality of memory devices.

Latest Patents

Lanieri's latest patents include a "Multi-stack bitcell architecture," which describes a device featuring a memory architecture with a multi-stack of transistors arranged in a multi-bitcell stack configuration. This architecture allows for a shared wordline across the transistors, with each transistor connected to a different bitline. Another notable patent is for "Circuit architecture in multi-dimensional monolithic structure," which involves a multi-transistor structure designed for circuit architecture. This structure includes a multi-transistor stack of N-type or P-type transistors arranged in a multi-device stack configuration, providing a common-centroid layout for process mismatch cancellation across multiple axes.

Career Highlights

Valerio Lanieri is currently employed at Arm Limited, a leading company in semiconductor and software design. His role at Arm Limited allows him to work on cutting-edge technologies that push the boundaries of memory architecture and circuit design.

Collaborations

Lanieri collaborates with various professionals in the field, including his coworker Amit Chhabra. Their combined expertise contributes to the advancement of innovative solutions in memory technology.

Conclusion

Valerio Lanieri's contributions to memory architecture through his patents and work at Arm Limited highlight his role as a key innovator in the technology sector. His advancements are paving the way for more efficient memory devices in the future.

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