Catania, Italy

Valentina Scuderi

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Stmicroelectronics S.r.l.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Valentina Scuderi. Retrieved from https://idiyas.com/inventor/valentina-scuderi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Valentina Scuderi: Innovator in Silicon Carbide Technology

Introduction

Valentina Scuderi is a prominent inventor based in Catania, Italy. She has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of silicon carbide devices. Her innovative approach has led to advancements that are crucial for various applications in electronics.

Latest Patents

Valentina holds a patent for a process for manufacturing a silicon carbide device. This patent describes a method that involves forming a first layer of a first metal on the back surface of a silicon carbide body. A second layer of a different metal is then formed on the first layer, creating a multilayer structure. The process includes the use of nickel or a nickel alloy, along with another metal capable of forming stable compounds with carbon. The multilayer is subsequently annealed to produce a mixed layer that includes nickel silicide and other compounds.

Career Highlights

Valentina Scuderi is currently employed at STMicroelectronics S.r.l., where she continues to work on innovative projects in semiconductor technology. Her expertise and dedication have positioned her as a key figure in her field.

Collaborations

Valentina collaborates with Massimo Boscaglia, contributing to the development of cutting-edge technologies in their industry.

Conclusion

Valentina Scuderi's work in silicon carbide technology exemplifies her commitment to innovation and excellence. Her contributions are paving the way for advancements in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…