Vaishali Ukirde

Title: Vaishali Ukirde: Innovator in Semiconductor Technology

Introduction

Vaishali Ukirde is a prominent inventor based in San Jose, California. She has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors (FETs). Her innovative approach has led to advancements that enhance the performance and manufacturability of these devices.

Latest Patents

Vaishali holds a patent for a field effect transistor source or drain with a multi-facet surface. This invention involves FET configurations where two or more facets are exposed on the surface of a semiconductor channel. The angled facets allow for conformal deposition of a convex or concave source/drain (S/D). A convex tip of the S/D enhances electric fields at the interface, reducing resistance between the S/D and the channel. Conversely, a concave tip yields a dual-gate FET that emphasizes reduced short-channel effects rather than electric field enhancement. The use of self-limiting, selective wet etches to expose the facets facilitates process control, interface chemistry management, and manufacturability.

Career Highlights

Vaishali Ukirde has established herself as a key figure in her field through her innovative work at Acorn Technologies, Inc. Her expertise in semiconductor technology has positioned her as a valuable asset to her company and the industry at large.

Collaborations

Vaishali collaborates with notable colleagues, including Andreas Goebel and Paul A Clifton. Their combined expertise fosters a creative environment that drives innovation and technological advancement.

Conclusion

Vaishali Ukirde's contributions to semiconductor technology exemplify her commitment to innovation and excellence. Her patent on multi-facet surface FET configurations showcases her ability to enhance device performance and manufacturability.