High Point, NC, United States of America

Vahid Gholizadeh

This inventor holds 1 USPTO granted patent. Top assignee: Sky Water Technology Foundry, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vahid Gholizadeh. Retrieved from https://idiyas.com/inventor/vahid-gholizadeh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Vahid Gholizadeh: Inventor in Semiconductor Technology.

Introduction

Vahid Gholizadeh is an inventor associated with High Point, North Carolina, and SkyWater Technology Foundry, Inc. His patent work concerns integrating carbon nanofilms into semiconductor manufacturing processes.

Latest Patents

Gholizadeh is named on 1 patent: “Carbon Film Integrated into a Back End of Line Process.” The invention describes depositing a carbon film by physical vapor deposition onto a surface formed during the back-end-of-line stage of complementary metal-oxide-semiconductor processing. Depending on the electronic device’s design and application, the resulting carbon nanofilm can serve as different components. One proposed implementation is a carbon nanofuse that can function as a permanent data-storage element in memory cells.

Career Highlights

The patent reflects work at the intersection of materials engineering and semiconductor fabrication. By incorporating carbon nanofilms into established processing steps, the disclosed approach explores potential uses for these films in electronic devices and memory technologies.

Collaborations

The patent record also names Peter N. Manos II and Philip Thompson as Gholizadeh’s coworkers. Their inclusion points to a collaborative context for the invention.

Conclusion

Vahid Gholizadeh’s patent highlights a potential role for carbon nanofilms in semiconductor devices, including their use as permanent data-storage elements in memory cells.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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