Moscow, Russia

Vadim Kharchevnikov

This inventor holds 1 USPTO granted patent. Top assignee: Societe Europeenne De Propulsion. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vadim Kharchevnikov. Retrieved from https://idiyas.com/inventor/vadim-kharchevnikov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: Vadim Kharchevnikov: Innovator in Plasma Acceleration Technology

Introduction

Vadim Kharchevnikov is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of plasma acceleration technology. His work is recognized for its innovative approach to measuring thrust variations in plasma systems.

Latest Patents

Vadim holds a patent for a "Device for measuring variations in the thrust of a plasma acceleration." This invention showcases his expertise and commitment to advancing technology in this specialized area. He has 1 patent to his name, reflecting his innovative contributions.

Career Highlights

Vadim is currently employed at the Société Européenne de Propulsion, where he continues to develop and refine technologies related to propulsion systems. His role at this esteemed organization allows him to work on cutting-edge projects that push the boundaries of current scientific understanding.

Collaborations

Throughout his career, Vadim has collaborated with talented individuals such as Alexei I Morozov and Antonina I Bougrova. These partnerships have fostered a creative environment that enhances innovation and problem-solving in their projects.

Conclusion

Vadim Kharchevnikov is a distinguished inventor whose work in plasma acceleration technology has made a significant impact. His patent and collaborations highlight his dedication to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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