Company Filing History:
Years Active: 1994-1998
Title: Uwe Doebler: Innovator in Deep Submicron MOSFET Technology
Introduction
Uwe Doebler is a prominent inventor based in Berlin, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of deep submicron MOSFETs. His innovative approaches have led to the filing of multiple patents, showcasing his expertise and dedication to advancing technology.
Latest Patents
Uwe Doebler holds 2 patents that focus on the formation of silicided junctions in deep submicron MOSFETs. His latest patents include methods for defect-enhanced CoSi2 formation and improved silicided junctions. The process involves precleaning a silicon wafer with hydrofluoric acid, followed by sputter cleaning with low energy Ar+ ions. This technique creates an ultra-shallow damage region, allowing for the deposition of cobalt metal at room temperature, resulting in the formation of a CoSi2 layer in the diffusion window.
Career Highlights
Uwe Doebler is associated with Siemens Aktiengesellschaft, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also pushed the boundaries of what is possible in the field of electronics.
Collaborations
Uwe has collaborated with notable colleagues such as Heinrich Zeininger and Christoph Zeller. Their combined expertise has fostered an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.
Conclusion
Uwe Doebler's contributions to the field of deep submicron MOSFET technology exemplify his commitment to innovation. His patents and collaborations highlight the importance of teamwork in achieving technological advancements.