The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1994
Filed:
Mar. 05, 1993
Heinrich Zeininger, Obermichelbach, DE;
Christoph Zeller, Ottobrunn, DE;
Udo Schwalke, Heldenstein, DE;
Uwe Doebler, Berlin, DE;
Wilfried Haensch, Charlotte, VT (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
An method of providing defect enhanced CoSi2 formation and improved silicided junctions in deep submicron MOSFETs. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.