Yeoju, South Korea

Unseon Cheon

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Unseon Cheon. Retrieved from https://idiyas.com/inventor/unseon-cheon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Unseon Cheon: Innovator in Semiconductor Technology

Introduction

Unseon Cheon is a prominent inventor based in Yeoju-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methodologies.

Latest Patents

Unseon Cheon holds a patent for a semiconductor device and layout method. This invention includes a plurality of standard cells arranged in both a first and second direction, parallel to the upper surface of a substrate and intersecting with each other. Each standard cell features one or more gate structures and active regions. Notably, some standard cells provide the same circuit while having input and output lines located at different positions.

Career Highlights

Unseon Cheon is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work focuses on advancing semiconductor devices, which are crucial for modern electronic applications.

Collaborations

Throughout his career, Unseon Cheon has collaborated with notable colleagues, including Jaeha Lee and Hyeongkyu Kim. These partnerships have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Unseon Cheon is a key figure in the semiconductor industry, with a patent that showcases his expertise and innovative spirit. His contributions continue to influence the advancement of technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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