Company Filing History:
Years Active: 2025
Title: Ulrike Grossner: Innovator in Semiconductor Manufacturing
Introduction
Ulrike Grossner is a prominent inventor based in Villigen, Switzerland. She has made significant contributions to the field of semiconductor manufacturing, particularly through her innovative methods that enhance the quality of semiconductor devices.
Latest Patents
Ulrike Grossner holds 1 patent for her work titled "Methods of manufacturing semiconductor devices." This patent describes a method that forms a part of a power semiconductor device. The method involves homoepitaxially forming two silicon carbide layers on a first side of a silicon carbide substrate and creating a pattern of pits on the second side of the substrate. The two layers include a buffer layer with the same doping type as the substrate and a doping concentration equal to or greater than 10cmin, which improves the quality of subsequent SiC layers. Additionally, an etch stopper layer is deposited on the buffer layer to block a trenching process, while the pattern of pits is obtained through electrochemical etching.
Career Highlights
Ulrike Grossner is associated with ETH Zurich, a leading research institution known for its cutting-edge advancements in technology and engineering. Her work at ETH Zurich has positioned her as a key figure in semiconductor research and development.
Collaborations
Ulrike collaborates with Massimo Camarda, contributing to the advancement of semiconductor technologies through their combined expertise.
Conclusion
Ulrike Grossner's innovative methods in semiconductor manufacturing exemplify her commitment to enhancing technology in this critical field. Her contributions continue to influence the development of high-quality semiconductor devices.