The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Nov. 04, 2020
Eth Zuerich, Zurich, CH;
Massimo Camarda, Mascalucia, IT;
Ulrike Grossner, Villigen, CH;
ETH Zuerich, Zurich, CH;
Abstract
A method forms a part of a power semiconductor device. The method includes homoepitaxially forming two silicon carbide layers on a first side of a silicon carbide substrate and forming a pattern of pits on a second side of the silicon carbide substrate. The two layers include a buffer layer, on the first side of the silicon carbide substrate, and have a same doping type of the silicon carbide substrate and a doping concentration equal to or greater than 10cmin order to increase the quality of at least one subsequent SiC layer. The two layers include an etch stopper layer, being deposited on the buffer layer and has a same doping type as the buffer layer but a lower doping concentration in order to block a trenching process. The pattern of pits, obtained by electrochemical etching, extends completely thorough the silicon carbide substrate and the buffer layer.