Campbell, CA, United States of America

Tze-yuan Fang

This inventor holds 1 USPTO granted patent. Top assignee: Integrated Device Technology, Inc.. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tze-yuan Fang. Retrieved from https://idiyas.com/inventor/tze-yuan-fang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tze-yuan Fang

Introduction

Tze-yuan Fang is a notable inventor based in Campbell, California. He has made significant contributions to the field of memory devices, particularly with his innovative patent that enhances the functionality of FIFO memory systems. His work is recognized for its potential to improve data processing and storage capabilities.

Latest Patents

Fang holds a patent for "Sequential flow-control and FIFO memory devices that are depth expandable in standard mode operation." This invention involves FIFO memory devices that can operate in hybrid modes, allowing them to be depth-expandable when connected with other FIFO memory devices. The patent describes two hybrid operating modes: the first supports a write interface in standard mode and a read interface in first-word fall-through (FWFT) mode, while the second supports a write interface in FWFT mode and a read interface in standard mode.

Career Highlights

Tze-yuan Fang is currently employed at Integrated Device Technology, Inc., where he continues to develop innovative solutions in memory technology. His work has contributed to advancements in the efficiency and performance of memory devices, making a significant impact in the tech industry.

Collaborations

Fang has collaborated with notable colleagues such as Mario F Au and Jiann-Jeng Duh. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Tze-yuan Fang's contributions to FIFO memory devices exemplify the importance of innovation in technology. His patent reflects a deep understanding of memory systems and their potential for expansion and efficiency. His work continues to influence the field and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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