Shanghai, China

Ty Chiu

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ty Chiu. Retrieved from https://idiyas.com/inventor/ty-chiu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Ty Chiu and Semiconductor Device Innovation.

Introduction

Ty Chiu is an inventor associated with Shanghai, China, and Semiconductor Manufacturing International (Shanghai) Corporation. His listed patent concerns the design and fabrication of lateral double-diffused metal-oxide-semiconductor (LDMOS) transistors.

Latest Patents

Chiu is credited with 1 patent: “Lateral Double Diffusion Metal-Oxide-Semiconductor (LDMOS) Transistors and Fabrication Method Thereof.” The invention describes an LDMOS transistor built on a semiconductor substrate with a well region and a drain region. It also features one or more drifting regions, an annular source region surrounding the drain, annular isolation structure, and annular gate dielectric and gate layers. The design focuses on the arrangement of these components within the transistor.

Career Highlights

Chiu’s listed work connects him with Semiconductor Manufacturing International (Shanghai) Corporation and semiconductor device technology. His patent addresses both transistor structure and a method for fabricating the device.

Collaborations

Jian Cai and Juilin Lu are identified as Chiu’s coworkers. The available information does not specify their roles in the patent or describe particular joint projects.

Conclusion

Ty Chiu’s listed patent documents an LDMOS transistor design and fabrication method, reflecting his association with semiconductor innovation in Shanghai.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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