This inventor holds 1 USPTO granted patent. Top assignee: Nan Ya Technology Corporation. Active years: 2006.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2006
Title: Tuz-Ching Tsai: Semiconductor Trench-Formation Inventor.
Introduction
Tuz-Ching Tsai is an inventor associated with Taoyuan, Taiwan, and Nan Ya Technology Corporation. Her work includes a patented method for forming deep trenches in semiconductor substrates.
Latest Patents
Tsai is credited with 1 patent: “Method and Composite Hard Mask for Forming Deep Trenches in a Semiconductor Substrate.” The invention describes building a layered mask from borosilicate glass and borophosphosilicate glass over pad nitride and pad oxide layers. Deep trenches are then etched through the layers and into the semiconductor substrate. The borophosphosilicate glass helps make the composite hard mask easier to remove after trench formation using a dry etch process with hydrogen fluoride vapor.
Career Highlights
Tsai’s patent focuses on semiconductor fabrication, specifically the formation of deep trenches and the removal of the hard mask used in the process. The disclosed approach combines multiple glass layers to serve as a composite mask.
Collaborations
The provided information lists Chang-Rong Wu and Yinan Chen as Tsai’s coworkers. It does not specify their roles in the patent or describe particular collaborative projects.
Conclusion
Tuz-Ching Tsai’s recorded invention addresses deep-trench fabrication in semiconductor substrates through a composite hard-mask design intended to simplify mask removal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile