Espoo, Finland

Tuomo Suntola

This inventor holds 10 USPTO granted patents. Top assignees: Asm America, Inc., Neste Oy, Asm Microchemistry Ltd.. Active years: 1983-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tuomo Suntola. Retrieved from https://idiyas.com/inventor/tuomo-suntola

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 70.0

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 1,647(Granted Patents)


Company Filing History:


Years Active: 1983-2013

Loading Chart...
10 patents (USPTO):Explore Patents

Title: Inventor Tuomo Suntola: Pioneering Thin Film Technology

Introduction: Tuomo Suntola, a distinguished inventor hailing from Espoo, Finland, is renowned for his groundbreaking contributions to thin film technology.

Latest Patents: Suntola holds several patents related to thin film deposition processes, with his most recent innovations focusing on enhancing the efficiency and precision of thin film manufacturing techniques.

Career Highlights: Throughout his illustrious career, Suntola has been instrumental in revolutionizing the semiconductor industry through his development of atomic layer deposition (ALD) technology, a method widely used in the production of microelectronics and advanced materials.

Collaborations: Suntola has collaborated with leading research institutions, universities, and technology companies worldwide to further advance the applications of ALD technology in various fields, solidifying his reputation as a pioneer in the realm of thin film innovation.

Conclusion: Tuomo Suntola's remarkable ingenuity and dedication to advancing thin film technology have not only earned him international acclaim but have also significantly impacted the landscape of modern semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…