Tung-Yi Chan

Title: Innovations of Tung-Yi Chan in Electrically Programmable Memory Devices

Introduction

Tung-Yi Chan is a notable inventor based in Berkeley, California. He has made significant contributions to the field of memory devices, particularly with his innovative patent related to electrically programmable memory technology. His work has implications for the advancement of semiconductor technology.

Latest Patents

Tung-Yi Chan holds a patent for an "Electrically programmable memory device employing source side injection." This invention describes an electrically programmable and erasable memory element that utilizes source-side hot-electron injection. The device features a semiconductor substrate of a first conductivity type, which includes a source region and a drain region of opposite conductivity type, along with a channel region extending between them. A control gate is positioned over the channel region, and a floating gate is insulated from the control gate, source, drain regions, and channel region. The design incorporates a weak gate control region near the source, which creates a high channel electric field to promote hot-electron injection during programming.

Career Highlights

Tung-Yi Chan is affiliated with the University of California, where he continues to engage in research and development in the field of semiconductor technology. His work has contributed to the understanding and advancement of memory devices, showcasing his expertise and innovative thinking.

Collaborations

He has collaborated with notable colleagues, including Albert T Wu and Ping Keung Ko, who have also made significant contributions to the field of semiconductor technology.

Conclusion

Tung-Yi Chan's innovative work in electrically programmable memory devices highlights his role as a key inventor in the semiconductor industry. His contributions continue to influence advancements in memory technology, showcasing the importance of innovation in this field.