Company Filing History:
Years Active: 1999
Title: Tsuyoshi Tojyo: Innovator in Semiconductor Technology
Introduction
Tsuyoshi Tojyo is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.
Latest Patents
One of Tojyo's latest patents is a semiconductor laser that features an AlGaInP-based buried-ridge design. This innovative laser includes an n-type GaAs current blocking layer buried on opposite sides of a ridge stripe portion. The ridge stripe is composed of an upper-layer portion of a p-type AlGaInP cladding layer, a p-type GaInP intermediate layer, and a p-type GaAs contact layer. Additionally, the ridge stripe portion has tapered regions at both ends, enhancing its performance.
Another notable patent involves a method of manufacturing a semiconductor device with an ohmic electrode. This method ensures a satisfactory ohmic contact to an n-type GaAs through low-temperature heat treatment. The process consists of two main steps: first, a metal layer containing Ni, Sn, and AuGe is formed on one surface of the n-type GaAs. Then, the n-type GaAs undergoes heat treatment at a temperature between 190°C and 300°C, resulting in the formation of the ohmic electrode.
Career Highlights
Tsuyoshi Tojyo is currently employed at Sony Corporation, where he continues to innovate in semiconductor technology. His work has not only contributed to the company's advancements but has also had a broader impact on the industry.
Collaborations
Tojyo has collaborated with notable colleagues, including Futoshi Hiei and Shoji Hirata. Their combined expertise has fostered a productive environment for innovation and development in semiconductor technologies.
Conclusion
Tsuyoshi Tojyo's contributions to semiconductor technology through his patents and work at Sony Corporation highlight his role as a key innovator in the field. His advancements continue to shape the future of semiconductor devices.