Company Filing History:
Years Active: 2009
Title: Tsung-De Lin: Innovator in Dynamic Random Access Memory Technology
Introduction
Tsung-De Lin is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of dynamic random access memory (DRAM). With a total of 2 patents to his name, Lin's work has had a notable impact on the industry.
Latest Patents
Lin's latest patents include a "Method of manufacturing dynamic random access memory" and a "Method of fabricating capacitor over bit line and bottom electrode thereof." The first patent outlines a comprehensive process for manufacturing DRAM, which involves providing a substrate, forming transistors, and creating various layers and openings to facilitate the production of memory cells. The second patent simplifies the fabrication of capacitors over bit lines, detailing the formation of word lines, landing plug contacts, and inter-layer dielectric layers.
Career Highlights
Tsung-De Lin is currently employed at Promos Technologies, Inc., where he continues to innovate in the field of semiconductor manufacturing. His expertise in DRAM technology has positioned him as a valuable asset to his company and the industry at large.
Collaborations
Lin has collaborated with notable colleagues, including Cheng-Che Lee and Tao-Yi Chang, contributing to advancements in semiconductor technology through teamwork and shared expertise.
Conclusion
Tsung-De Lin's contributions to the field of dynamic random access memory manufacturing highlight his innovative spirit and technical prowess. His patents reflect a commitment to advancing technology and improving manufacturing processes in the semiconductor industry.