Tsung-Chan Tsai

Title: Innovations by Tsung-Chan Tsai

Introduction

Tsung-Chan Tsai is a notable inventor based in College Station, TX (US). He has made significant contributions to the field of plasma treatment and chemical vapor deposition, particularly in applications involving temperature-sensitive biological materials. His work has led to the development of innovative methods and apparatuses that enhance the deposition of films on biological substrates.

Latest Patents

Tsung-Chan Tsai holds 2 patents. His latest patent focuses on a method and apparatus for depositing a film on a biological substrate. This invention includes a plasma generation device that features a dielectric conduit and a high voltage electrode. The device is strategically placed near the biological substrate, with a gas supply containing a precursor material directed through the dielectric conduit. An electric field created by the potential difference between the high voltage electrode and the biological substrate ionizes a portion of the gas supply, resulting in plasma emanating from the dielectric conduit and contacting the biological substrate. This plasma induces a reaction of the precursor material, leading to the formation of a film deposited on the biological substrate.

Career Highlights

Tsung-Chan Tsai is affiliated with The Texas A&M University System, where he continues to advance his research and innovations. His work is characterized by a commitment to enhancing the capabilities of plasma treatment technologies.

Collaborations

One of his notable collaborators is David Staack, with whom he has worked on various projects related to his patents and innovations.

Conclusion

Tsung-Chan Tsai's contributions to the field of plasma treatment and chemical vapor deposition have paved the way for advancements in the application of these technologies in biological contexts. His innovative methods continue to influence research and development in this area.