Yamanashi, Japan

Tsuneyuki Tanaka

This inventor holds 1 USPTO granted patent. Top assignees: Fujitsu Corporation, Fujitsu Quantum Devices Limied. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tsuneyuki Tanaka. Retrieved from https://idiyas.com/inventor/tsuneyuki-tanaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Tsuneyuki Tanaka: High-Frequency Circuit Inventor

Introduction

Tsuneyuki Tanaka is an inventor associated with Yamanashi, Japan. His recorded patent concerns a high-frequency circuit device that uses a varactor diode and strip lines to help determine the device’s electrical characteristics.

Latest Patents

Tanaka’s listed patent is titled “High Frequency Circuit Device with Stripline Having an Adjustable [Length].” The device includes a varactor diode, a first strip line connected to one diode terminal, and a second strip line connected to the other terminal. The second strip line is open at one end and is sized to produce an equivalent strip-line length that accounts for the capacitances of both the diode and the strip line. This equivalent length determines a characteristic of the high-frequency circuit device. Tanaka is credited with 1 patent in the information provided.

Career Highlights

Tanaka’s career information associates him with Fujitsu Corporation and Fujitsu Quantum Devices Limited. His patent reflects work on high-frequency circuit design and the use of adjustable strip-line lengths in circuits incorporating varactor diodes.

Collaborations

Tanaka’s listed coworker is Nagahisa Furutani. Their association provides context for the professional network connected with Tanaka’s inventive work.

Conclusion

Tsuneyuki Tanaka’s recorded invention addresses how strip-line dimensions and component capacitance can shape the characteristics of a high-frequency circuit device.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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