Company Filing History:
Years Active: 1998
Title: The Innovations of Tsuneteru Takahashi
Introduction
Tsuneteru Takahashi is a notable inventor based in Ushiku, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his work on gallium arsenide phosphide materials. His innovative approach has led to advancements that are crucial for various electronic applications.
Latest Patents
Takahashi holds a patent for an epitaxial wafer of gallium arsenide phosphide. This patent describes a structure where a single crystal substrate is layered with a gallium arsenide phosphide layer that has a varying mixed crystal ratio, a layer with a constant mixed crystal ratio, and a nitrogen-doped gallium arsenide phosphide layer. The nitrogen-doped layer is characterized by a carrier concentration of 3.times.10.sup.15 cm.sup.-3 or less, which enhances its performance in electronic devices. He has 1 patent to his name.
Career Highlights
Takahashi is currently employed at Mitsubishi Kasei Corporation, where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in improving the efficiency and effectiveness of gallium arsenide phosphide materials in various applications.
Collaborations
Throughout his career, Takahashi has collaborated with talented individuals such as Tadashige Sato and Megumi Imai. These partnerships have fostered a creative environment that has led to innovative solutions in the field of semiconductor technology.
Conclusion
Tsuneteru Takahashi's contributions to the field of semiconductor technology, particularly through his patent on gallium arsenide phosphide, highlight his role as a significant inventor. His work at Mitsubishi Kasei Corporation and collaborations with other professionals further emphasize his impact on the industry.