Hadano, Japan

Tsuguo Matsuura


Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 90(Granted Patents)


Location History:

  • Kanagawa, JP (1995)
  • Hadano, JP (1980 - 2002)

Company Filing History:


Years Active: 1980-2002

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6 patents (USPTO):Explore Patents

Title: Tsuguo Matsuura: Innovator in Memory Systems

Introduction

Tsuguo Matsuura is a prominent inventor known for his contributions to memory systems. He is based in Hadano, Japan, and has been awarded six patents throughout his career. His work primarily focuses on enhancing memory control devices and systems.

Latest Patents

Matsuura's latest patents include a memory system that utilizes DRAM or synchronous DRAM as a memory unit. This system features a memory controller that manages memory access requests, incorporating a row address buffer to store extracted row addresses. It also includes a pointer register and a correspondence detection circuit to ensure efficient memory access. Another significant patent is a memory control device that integrates vector processors with a scalar processor. This device includes a block valid memory and a block group valid table, which work together to manage data storage effectively.

Career Highlights

Matsuura has made significant strides in the field of memory technology while working at Hitachi, Ltd. His innovative approaches have led to advancements in memory control systems, making them more efficient and reliable. His expertise in this area has positioned him as a key figure in the development of modern memory technologies.

Collaborations

Throughout his career, Matsuura has collaborated with notable colleagues, including Tsuguo Shimizu and Shunichi Torii. These collaborations have contributed to the success of various projects and innovations in memory systems.

Conclusion

Tsuguo Matsuura's work in memory systems has significantly impacted the field of technology. His innovative patents and collaborations highlight his dedication to advancing memory control devices. His contributions continue to influence the development of efficient memory technologies.

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