New York, NY, United States of America

Tseng-Chung Lee


Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 304(Granted Patents)


Location History:

  • New York City, NY (US) (2000)
  • New York, NY (US) (1996 - 2004)

Company Filing History:


Years Active: 1996-2004

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9 patents (USPTO):

Title: Innovations of Tseng-Chung Lee

Introduction

Tseng-Chung Lee is a notable inventor based in New York, NY, with a significant contribution to the field of integrated circuits. He holds a total of nine patents, showcasing his expertise and innovative spirit in technology.

Latest Patents

One of his latest patents involves damascene capacitors for integrated circuits. This patent describes a capacitor structure formed in a window in a dielectric layer of an integrated circuit. The design includes a lower electrode positioned on a portion of the cavity's side surface, avoiding potential shorting problems during planarization. The technique for fabricating this integrated circuit is easily integrated into standard multi-level processing techniques. Another significant patent focuses on etch endpoint detection, which describes an interferometric in-situ endpoint detection technique for plasma etching. This method allows for the prediction of the endpoint before any overetching occurs, simplifying the detection process and enabling precise control over the etching process.

Career Highlights

Throughout his career, Tseng-Chung Lee has worked with prominent companies such as Lucent Technologies Inc. and AT&T Corp. His work in these organizations has contributed to advancements in technology and innovation in the field of integrated circuits.

Collaborations

He has collaborated with notable coworkers, including Helen Louise Maynard and Dale E. Ibbotson, further enhancing his contributions to the industry.

Conclusion

Tseng-Chung Lee's innovative patents and career achievements highlight his significant role in the advancement of integrated circuit technology. His work continues to influence the field and inspire future innovations.

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