The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 1998

Filed:

Oct. 10, 1995
Applicant:
Inventors:

Nadine Blayo, Pontivy, FR;

Arnaud Grevoz, Creteil, FR;

Tseng-Chung Lee, New York, NY (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B / ; G01N / ;
U.S. Cl.
CPC ...
356369 ; 356381 ;
Abstract

A non destructive method of spectroscopic ellipsometry adapted to measure the width of features in periodic structures, particularly those features which are less than one micron wide. The method is also adapted to make comparisons between a known reference structure and a sample structure, and to control the fabrication of periodic structures in a plasma etching reactor. Peaks in functions DELTA and PSI versus wavelength are monitored and correlated against reference curves, permitting etching conditions to be modified. This technique avoids the need for use of scanning electron microscopy to measure the linewidth, which is a destructive method. It also posses an advantage over scatterometry which requires several detectors arrayed at different angles from an incident beam to measure the different diffracted orders.


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