Troy Guan

Title: Innovations by Troy Guan in Non-Volatile Memory Technology

Introduction

Troy Guan is an accomplished inventor based in Shanghai, China. He has made significant contributions to the field of non-volatile memory technology. His innovative approach to leak detection in memory devices has garnered attention in the tech industry.

Latest Patents

Troy Guan holds a patent for "Adaptive word line stress for leak detection in non-volatile memory." This patent describes a process in which a selected set of word lines in a NAND or other non-volatile memory device is subjected to a high stress voltage. Meanwhile, other parts of the memory array are biased to a low level. The current drawn by the array is compared to a leakage detection current that increases in amplitude. This method allows for the identification of leakage while ensuring that low leakage word lines receive less stress, and those with greater leakage receive more.

Career Highlights

Troy Guan is currently employed at Sandisk Technologies Inc., where he continues to develop innovative solutions in memory technology. His work has been instrumental in advancing the efficiency and reliability of non-volatile memory devices.

Collaborations

Troy collaborates with talented coworkers, including Liang Li and Wendy Yu. Their combined expertise contributes to the success of their projects and the advancement of technology at Sandisk Technologies Inc.

Conclusion

Troy Guan's contributions to non-volatile memory technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to impact the industry positively.