Trevan Landin

Title: Trevan Landin: Innovator in Germanium Deposition Technology

Introduction

Trevan Landin is a notable inventor based in Queen Creek, AZ (US). He has made significant contributions to the field of semiconductor technology, particularly in germanium deposition methods. With a total of 2 patents to his name, Landin's work is paving the way for advancements in material science.

Latest Patents

Landin's latest patents focus on innovative methods for depositing germanium over silicon-containing surfaces. The first patent describes a method that involves depositing a seed layer of germanium at a first temperature, with the seed layer's thickness ranging from about one monolayer to about 1000 Å. After the initial deposition, the temperature of the reaction chamber is increased while continuing to deposit germanium. The method also includes holding the reaction chamber in a second temperature range, which is greater than the first, while continuing the deposition process. This approach enhances the efficiency and quality of the germanium layers being deposited.

Career Highlights

Trevan Landin is currently employed at Asm America, Inc., where he applies his expertise in semiconductor technologies. His work at the company has been instrumental in developing advanced deposition techniques that are crucial for modern electronic devices.

Collaborations

Landin collaborates with talented professionals in his field, including Matthias Bauer and Paul D Brabant. These partnerships foster innovation and contribute to the success of their projects.

Conclusion

Trevan Landin's contributions to germanium deposition technology highlight his role as an influential inventor in the semiconductor industry. His innovative methods and collaborations are set to impact the future of material science significantly.