Asm America, Inc.

Trevan Landin

Matthias Bauer

Paul D Brabant

A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 &#x212b;. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.

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Queen Creek, AZ, United States of America

Trevan Landin