Allentown, PA, United States of America

Touhidur Rahman

This inventor holds 3 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2016-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Touhidur Rahman. Retrieved from https://idiyas.com/inventor/touhidur-rahman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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3 patents (USPTO):Explore Patents

Title: The Innovations of Touhidur Rahman

Introduction

Touhidur Rahman is a notable inventor based in Allentown, PA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of trench MOSFET devices. With a total of 3 patents to his name, Rahman's work has garnered attention for its innovative approaches and practical applications.

Latest Patents

One of his latest patents is focused on a trench MOSFET having reduced gate charge. This device includes a semiconductor layer of a first doping type, with MOS transistor cells situated in a body region of a second doping type within the semiconductor layer. The design features a first cell type that includes a first trench providing a first gate electrode, which can either be positioned on the semiconductor surface between the first trench and a second trench or be integrated into the trench itself. Additionally, a first source region is formed in the body region, ensuring that the first gate electrode is electrically isolated from the first source region. The second cell type incorporates a third trench that provides a second gate electrode, which can also be positioned on the semiconductor surface between the third trench and a fourth trench, with a second source region present in the body region. An electrically conductive member connects the second gate electrode, first source region, and second source region together, enhancing the device's efficiency.

Career Highlights

Touhidur Rahman is currently employed at Texas Instruments Corporation, where he continues to innovate and develop advanced semiconductor technologies. His work at Texas Instruments has positioned him as a key player in the industry, contributing to the company's reputation for excellence in electronic components.

Collaborations

Rahman collaborates with Christopher Boguslaw Kocon, leveraging their combined expertise to push the boundaries of semiconductor technology. Their partnership exemplifies the importance of teamwork in driving innovation forward.

Conclusion

Touhidur Rahman's contributions to the field of semiconductor technology, particularly through his patents on trench MOSFET devices, highlight his role as an influential inventor. His work continues to impact the industry positively, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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