Edogawa, Japan

Toshiyasu Onoda

This inventor holds 1 USPTO granted patent. Top assignees: Kabushiki Kaisha Toshiba, Shibaura Engineering Works Co., Ltd.. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiyasu Onoda. Retrieved from https://idiyas.com/inventor/toshiyasu-onoda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Toshiyasu Onoda: Innovator in Metal Film Etching Methods

Introduction

Toshiyasu Onoda is a notable inventor based in Edogawa-Ku, Japan. He has made significant contributions to the field of metal film etching, particularly with his innovative methods that enhance the efficiency and precision of the etching process.

Latest Patents

Onoda holds a patent for a metal film etching method. This method selectively etches a metal film formed on a layer insulating film that includes viaholes. The process ensures that the metal film covers the surface of the insulating layer and fills the viaholes, allowing for the complete removal of the metal film in areas not filling the viaholes without creating pits in the filled portions. The etching method utilizes a mixed reactive gas comprising fluorine atoms, chlorine atoms, and oxygen gas.

Career Highlights

Throughout his career, Toshiyasu Onoda has worked with prominent companies, including Kabushiki Kaisha Toshiba and Shibaura Engineering Works Co., Ltd. His work has significantly impacted the development of advanced etching techniques used in various applications.

Collaborations

Onoda has collaborated with notable colleagues such as Kei Hattori and Akira Kobayashi. Their combined expertise has contributed to the advancement of technologies in the field of metal film etching.

Conclusion

Toshiyasu Onoda's innovative contributions to metal film etching methods demonstrate his expertise and commitment to advancing technology. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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