Company Filing History:
Years Active: 2001-2002
Title: Toshiya Shingen: Innovator in Chemical Vapor Deposition
Introduction
Toshiya Shingen is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of chemical vapor deposition, particularly in the development of materials and processes for thin film production. With a total of 2 patents, his work has garnered attention in the scientific community.
Latest Patents
Shingen's latest patents include a novel copper material for chemical vapor deposition and a process for forming thin films using this material. The first patent describes a material comprising a β-diketonatocopper (II) complex that remains liquid at room temperature, making it suitable for various applications. The second patent outlines a method for producing a ruthenium or ruthenium oxide thin film, utilizing a specific compound as a ruthenium source in the chemical vapor deposition process.
Career Highlights
Toshiya Shingen is currently employed at Asahi Denka Kogyo Kabushiki Kaisha, where he continues to innovate in the field of materials science. His expertise in chemical vapor deposition has positioned him as a key figure in the development of advanced thin film technologies.
Collaborations
Throughout his career, Shingen has collaborated with notable colleagues, including Kazuhisa Onozawa and Akifumi Masuko. These partnerships have contributed to the advancement of research and development in their respective fields.
Conclusion
Toshiya Shingen's contributions to chemical vapor deposition and thin film technology highlight his role as an influential inventor. His innovative patents and collaborations continue to shape the future of materials science.