Tokyo, Japan

Toshisuke Kashiwagi

This inventor holds 1 USPTO granted patent. Top assignee: Raytech Corporation. Active years: 2001.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Innovations of Toshisuke Kashiwagi in Radiation Detection

Introduction

Toshisuke Kashiwagi is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of radiation detection technology. His innovative approach has led to advancements that enhance the performance and reliability of radiation detectors.

Latest Patents

Kashiwagi holds a patent for a process for fabricating a drift-type silicon radiation detector. This patent describes a method that involves drifting lithium from one side of a silicon wafer while forming a boron diffusion layer on the opposite side prior to the drifting step. This technique allows for a uniform drift layer formation, eliminating the need to lap the wafer's other side. Additionally, a PN junction diode is created on the opposite side, which enhances the detector's resistance to environmental influences compared to conventional designs.

Career Highlights

Kashiwagi is associated with Raytech Corporation, where he applies his expertise in developing advanced radiation detection technologies. His work has been instrumental in improving the efficiency and effectiveness of radiation detectors used in various applications.

Collaborations

Kashiwagi collaborates with talented individuals such as Hideaki Onabe and Koichi Kawasaki. Their combined efforts contribute to the innovative projects at Raytech Corporation.

Conclusion

Toshisuke Kashiwagi's contributions to radiation detection technology exemplify the impact of innovative thinking in engineering. His patented processes and collaborative efforts continue to shape advancements in the field.

Profile summary based on public USPTO records.
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