Company Filing History:
2 out of 42,517 
2 out of 87 
2 out of 832,912 Years Active: 1995-2003
Title: Toshiro Aoto: Innovator in Semiconductor Technology
Introduction
Toshiro Aoto is a prominent inventor based in Musashimurayama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work primarily focuses on static random access memory (SRAM) devices, which are crucial for modern electronic applications.
Latest Patents
Aoto's latest patents include a semiconductor integrated circuit device that features a static random access memory comprising memory cells. Each memory cell is composed of transfer MISFETs controlled by word lines and a flip-flop circuit made of driver MISFETs and load MISFETs. Notably, the top of the load MISFETs is covered with supply voltage lines, allowing capacitor elements of a stacked structure to be formed between the gate electrodes of the load MISFETs and the supply voltage lines. Another significant patent is a semiconductor memory device that also includes driver and load MISFETs along with capacitor elements, further enhancing the efficiency and performance of SRAM technology.
Career Highlights
Throughout his career, Toshiro Aoto has worked with notable companies such as Hitachi, Ltd. and Hitachi ULSI Engineering Corporation. His experience in these organizations has allowed him to develop innovative solutions in semiconductor design and memory technology.
Collaborations
Aoto has collaborated with esteemed colleagues, including Koichiro Ishibashi and Sadayuki Morita. These partnerships have contributed to the advancement of semiconductor technologies and the successful development of his patented inventions.
Conclusion
Toshiro Aoto's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of efficient memory devices in modern electronics.