Hadano, Japan

Toshio Terouchi


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 46(Granted Patents)


Company Filing History:


Years Active: 1999

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Toshio Terouchi: Innovator in Metalization Structures

Introduction

Toshio Terouchi is a prominent inventor based in Hadano, Japan. He is known for his significant contributions to the field of metalization structures, which are crucial in various electronic applications. His innovative approach has led to the development of a reliable metalization structure that enhances the performance and durability of electronic devices.

Latest Patents

Toshio Terouchi holds a patent for a "Metalization structure and manufacturing method thereof." This invention features a metalization structure that includes a first conductor layer on the surface of an underlying layer, along with a second conductor layer that is conductively connected to the first. A polyimide insulative film with a low thermal expansion coefficient is strategically placed between the conductor layers. This design aims to ensure high reliability and prevent issues such as peeling or cracking.

Career Highlights

Toshio Terouchi has made significant strides in his career, particularly through his work at Hitachi, Ltd. His expertise in metalization structures has positioned him as a key figure in advancing technology in this area. His innovative solutions have contributed to the development of more reliable electronic components.

Collaborations

Throughout his career, Toshio has collaborated with notable colleagues, including Hideo Sotokawa and Masashi Nishiki. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Toshio Terouchi's contributions to the field of metalization structures exemplify his dedication to innovation and excellence. His work continues to influence the development of reliable electronic devices, showcasing the importance of inventive minds in technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…