Company Filing History:
Years Active: 2005
Title: The Innovations of Toshio Nishida
Introduction
Toshio Nishida is a prominent inventor based in Atsugi, Japan. He is known for his contributions to the field of semiconductor technology. His innovative work has led to the development of a significant patent that enhances the efficiency of nitride semiconductor devices.
Latest Patents
Toshio Nishida holds a patent for a "Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device." This patent describes a masking material that includes stripe-like openings parallel to the [1-100] direction of a nitride semiconductor thin film, which is formed on a substrate. The nitride semiconductor thin films doped with Mg are grown on the openings by selective-area growth. The films consist of portions formed as a result of growth in the direction perpendicular to a (0001) principal plane, and portions formed as a result of the growth of {11-2x} facets. Notably, the Mg concentration of one portion is made lower than that of the other.
Career Highlights
Toshio Nishida is associated with Nippon Telegraph and Telephone Corporation, where he has made significant contributions to semiconductor research and development. His work has been instrumental in advancing the technology used in light-emitting devices.
Collaborations
Some of his notable coworkers include Tetsuya Akasaka and Seigo Ando, who have collaborated with him on various projects related to semiconductor technology.
Conclusion
Toshio Nishida's innovative work in the field of nitride semiconductors has led to advancements that are crucial for the development of efficient light-emitting devices. His contributions continue to impact the semiconductor industry positively.