The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Mar. 17, 2003
Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device
Tetsuya Akasaka, Atsugi, JP;
Seigo Ando, Sagamihara, JP;
Toshio Nishida, Atsugi, JP;
Naoki Kobayashi, Atsugi, JP;
Tadashi Saitoh, Hadano, JP;
Tetsuya Akasaka, Atsugi, JP;
Seigo Ando, Sagamihara, JP;
Toshio Nishida, Atsugi, JP;
Naoki Kobayashi, Atsugi, JP;
Tadashi Saitoh, Hadano, JP;
Nippon Telegraph & Telephone Corporation, Tokyo, JP;
Abstract
A masking material, which includes stripe-like openingsparallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin filmsdoped with Mg are grown on the openingsby selective-area growth. The nitride semiconductor thin filmsare composed of a portionformed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portionformed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portionis made lower than that of the portion