Toyama, Japan

Toshio Matsubara

This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshio Matsubara. Retrieved from https://idiyas.com/inventor/toshio-matsubara-wyknersh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Toshio Matsubara: Substrate Processing Innovation.

Introduction

Toshio Matsubara is an inventor associated with Toyama, Japan, and Matsushita Electric Industrial Co., Ltd. His patent work includes an apparatus and method designed to improve the uniformity of substrate processing.

Latest Patents

Matsubara is credited with 1 patent: “Substrate Processing Apparatus and Substrate Processing Method.” The invention describes a pressure-reducible reaction chamber, a shower head that supplies processing gas through a perforated gas diffusion plate, and a support for holding a substrate. In the plate’s peripheral region, each through-hole has an inlet area larger than its outlet area. This design helps distribute processing gas uniformly, supporting more consistent film deposition and film etching.

Career Highlights

Matsubara’s recorded patent contribution focuses on semiconductor substrate processing. The invention addresses gas distribution within processing equipment, a factor that can affect the consistency of manufacturing operations.

Collaborations

Matsubara’s listed coworkers include Hideto Uchijima and Hiroyuki Satoh. His patent is associated with Matsushita Electric Industrial Co., Ltd.

Conclusion

Toshio Matsubara’s patent presents a gas-distribution design intended to make substrate processing more uniform, highlighting his contribution to semiconductor manufacturing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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