Tateyama, Japan

Toshio Koyama

This inventor holds 1 USPTO granted patent. Top assignee: Nippon Steel Semiconductor Corporation. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshio Koyama. Retrieved from https://idiyas.com/inventor/toshio-koyama-e37luq94

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2001

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Toshio Koyama

Introduction

Toshio Koyama is a notable inventor based in Tateyama, Japan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on enhancing the functionality and efficiency of integrated circuits.

Latest Patents

Koyama holds a patent for a burn-in board, which features a Vcc circuit changeover socket and a GND circuit changeover socket. These components are strategically arranged in a wiring area between terminals of an IC socket, along with corresponding resistors. The design allows for a first electric potential (Vcc) and a second electric potential (GND) to be supplied to the terminals of the IC socket. This innovation is crucial for testing and ensuring the reliability of integrated circuits.

Career Highlights

Toshio Koyama is associated with Nippon Steel Semiconductor Corporation, where he has contributed to various projects aimed at improving semiconductor technologies. His expertise in circuit design and innovation has made him a valuable asset to the company.

Conclusion

Toshio Koyama's work exemplifies the spirit of innovation in the semiconductor industry. His patent for the burn-in board showcases his commitment to enhancing integrated circuit technology. His contributions continue to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…